Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

W. L. Warren, P. M. Lenahan

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.

Original languageEnglish (US)
Pages (from-to)1296-1298
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number19
DOIs
StatePublished - Dec 1 1986

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metal oxides
electron paramagnetic resonance
oxides
silicon
injection
damage
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides",
abstract = "We find that two paramagnetic]] trivalent silicon{"} centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.",
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Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides. / Warren, W. L.; Lenahan, P. M.

In: Applied Physics Letters, Vol. 49, No. 19, 01.12.1986, p. 1296-1298.

Research output: Contribution to journalArticle

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