Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

W. L. Warren, P. M. Lenahan

Research output: Contribution to journalArticle

52 Scopus citations

Abstract

We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.

Original languageEnglish (US)
Pages (from-to)1296-1298
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number19
DOIs
StatePublished - Dec 1 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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