Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

A. Y. Kang, Patrick M. Lenahan, J. F. Conley, R. Solanki

Research output: Contribution to journalArticle

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Abstract

We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps.

Original languageEnglish (US)
Pages (from-to)1128-1130
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number6
DOIs
StatePublished - Aug 5 2002

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hafnium oxides
electron paramagnetic resonance
defects
silicon
electrical measurement
capacitance
traps
vapor deposition

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps.",
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Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si. / Kang, A. Y.; Lenahan, Patrick M.; Conley, J. F.; Solanki, R.

In: Applied Physics Letters, Vol. 81, No. 6, 05.08.2002, p. 1128-1130.

Research output: Contribution to journalArticle

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