Electron spin resonance study of radiation-induced point defects in nitrided and reoxidized nitrided oxides

J. T. Yount, Patrick M. Lenahan, G. J. Dunn

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, while reoxidation of nitrided oxides increases the number of radiation-induced E' centers, reduces the number of bridging nitrogen center precursors, and introduces overcoordinated nitrogen center precursors. Nitridation and reoxidation of these films also changes the distribution of the radiation-induced defects. Our evidence supports earlier findings that the bridging nitrogen defect plays an important role in electron trapping in nitrided oxides and that the dominant hole trap in reoxidized nitrided oxides is not the E' center. Exposure to molecular hydrogen at room temperature annihilates paramagnetism of the nitrogen-associated centers and reduces that of the E' centers.

Original languageEnglish (US)
Pages (from-to)2211-2219
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume39
Issue number6
DOIs
StatePublished - Jan 1 1992

Fingerprint

Point defects
point defects
Paramagnetic resonance
electron paramagnetic resonance
Nitrogen
Radiation
Oxides
oxides
radiation
Nitridation
nitrogen
Oxide films
Hole traps
Paramagnetism
Defects
oxide films
paramagnetism
defects
X rays
Hydrogen

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

@article{adb65ac6267c43abbf7b3ae61b170f7c,
title = "Electron spin resonance study of radiation-induced point defects in nitrided and reoxidized nitrided oxides",
abstract = "X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, while reoxidation of nitrided oxides increases the number of radiation-induced E' centers, reduces the number of bridging nitrogen center precursors, and introduces overcoordinated nitrogen center precursors. Nitridation and reoxidation of these films also changes the distribution of the radiation-induced defects. Our evidence supports earlier findings that the bridging nitrogen defect plays an important role in electron trapping in nitrided oxides and that the dominant hole trap in reoxidized nitrided oxides is not the E' center. Exposure to molecular hydrogen at room temperature annihilates paramagnetism of the nitrogen-associated centers and reduces that of the E' centers.",
author = "Yount, {J. T.} and Lenahan, {Patrick M.} and Dunn, {G. J.}",
year = "1992",
month = "1",
day = "1",
doi = "10.1109/23.211423",
language = "English (US)",
volume = "39",
pages = "2211--2219",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Electron spin resonance study of radiation-induced point defects in nitrided and reoxidized nitrided oxides. / Yount, J. T.; Lenahan, Patrick M.; Dunn, G. J.

In: IEEE Transactions on Nuclear Science, Vol. 39, No. 6, 01.01.1992, p. 2211-2219.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron spin resonance study of radiation-induced point defects in nitrided and reoxidized nitrided oxides

AU - Yount, J. T.

AU - Lenahan, Patrick M.

AU - Dunn, G. J.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, while reoxidation of nitrided oxides increases the number of radiation-induced E' centers, reduces the number of bridging nitrogen center precursors, and introduces overcoordinated nitrogen center precursors. Nitridation and reoxidation of these films also changes the distribution of the radiation-induced defects. Our evidence supports earlier findings that the bridging nitrogen defect plays an important role in electron trapping in nitrided oxides and that the dominant hole trap in reoxidized nitrided oxides is not the E' center. Exposure to molecular hydrogen at room temperature annihilates paramagnetism of the nitrogen-associated centers and reduces that of the E' centers.

AB - X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, while reoxidation of nitrided oxides increases the number of radiation-induced E' centers, reduces the number of bridging nitrogen center precursors, and introduces overcoordinated nitrogen center precursors. Nitridation and reoxidation of these films also changes the distribution of the radiation-induced defects. Our evidence supports earlier findings that the bridging nitrogen defect plays an important role in electron trapping in nitrided oxides and that the dominant hole trap in reoxidized nitrided oxides is not the E' center. Exposure to molecular hydrogen at room temperature annihilates paramagnetism of the nitrogen-associated centers and reduces that of the E' centers.

UR - http://www.scopus.com/inward/record.url?scp=0000109399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000109399&partnerID=8YFLogxK

U2 - 10.1109/23.211423

DO - 10.1109/23.211423

M3 - Article

AN - SCOPUS:0000109399

VL - 39

SP - 2211

EP - 2219

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -