Electronic band-structure engineering of GaAs/AlxGa 1-xAs quantum well superlattices with substructures

Mingrong Shen, Wenwu Cao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report a theoretical investigation on the band structures of electrons in both infinite and finite semiconductor quantum well/barrier superlattices with each unit cell containing alternately two types of materials. When the unit cell of a superlattice, made of GaAs and AlxGa1-xAs, is further divided into four and six sublayers of these two materials, narrower passbands and/or broad stopbands can be obtained for electrons with energy slightly larger than the potential barrier. When a finite superlattice has two different periods and each unit cell contains six sublayers of alternating GaAs and AlxGa1-xAs, very sharp passbands can be obtained for electron energy right below and above the potential barrier. The results may be used to build a high-Q electron energy filter.

Original languageEnglish (US)
Pages (from-to)122-127
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume103
Issue number2
DOIs
StatePublished - Oct 15 2003

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Superlattices
substructures
Band structure
Semiconductor quantum wells
superlattices
quantum wells
engineering
Electrons
cells
electronics
electron energy
Q factors
electrons
filters
gallium arsenide
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We report a theoretical investigation on the band structures of electrons in both infinite and finite semiconductor quantum well/barrier superlattices with each unit cell containing alternately two types of materials. When the unit cell of a superlattice, made of GaAs and AlxGa1-xAs, is further divided into four and six sublayers of these two materials, narrower passbands and/or broad stopbands can be obtained for electrons with energy slightly larger than the potential barrier. When a finite superlattice has two different periods and each unit cell contains six sublayers of alternating GaAs and AlxGa1-xAs, very sharp passbands can be obtained for electron energy right below and above the potential barrier. The results may be used to build a high-Q electron energy filter.",
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AU - Cao, Wenwu

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AB - We report a theoretical investigation on the band structures of electrons in both infinite and finite semiconductor quantum well/barrier superlattices with each unit cell containing alternately two types of materials. When the unit cell of a superlattice, made of GaAs and AlxGa1-xAs, is further divided into four and six sublayers of these two materials, narrower passbands and/or broad stopbands can be obtained for electrons with energy slightly larger than the potential barrier. When a finite superlattice has two different periods and each unit cell contains six sublayers of alternating GaAs and AlxGa1-xAs, very sharp passbands can be obtained for electron energy right below and above the potential barrier. The results may be used to build a high-Q electron energy filter.

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