Electronic distortion in keV particle bombardment

Reena Bhatia, Barbara Jane Garrison

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The angle resolved velocity distributions of excited (4F 7/2) and ground state (4F9/2) Rh atoms ejected from the Rh {100} surface due to keV Ar+ ion bombardment are described with a model that takes into account the local electronic environment. The lifetime of the excitation probability for each excited Rh atom is assumed to depend on the local embedded-atom method (EAM) density. It is thus possible to distinguish between ejected atoms that experience very little difference in their electronic environments. Although most excited atoms that survive with significantly high excitation probabilities originate from the surface layer, it is not uncommon for an atom beneath the surface to eject from a disrupted environment and end up with a high excitation probability. This model improves upon a previous one, where the lifetime was assumed to vary with the height above the original surface.

Original languageEnglish (US)
Pages (from-to)8437-8443
Number of pages7
JournalThe Journal of Chemical Physics
Volume100
Issue number11
DOIs
StatePublished - Jan 1 1994

Fingerprint

bombardment
Atoms
electronics
atoms
excitation
life (durability)
embedded atom method
Ion bombardment
Velocity distribution
surface layers
Ground state
velocity distribution
ground state
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Bhatia, Reena ; Garrison, Barbara Jane. / Electronic distortion in keV particle bombardment. In: The Journal of Chemical Physics. 1994 ; Vol. 100, No. 11. pp. 8437-8443.
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Electronic distortion in keV particle bombardment. / Bhatia, Reena; Garrison, Barbara Jane.

In: The Journal of Chemical Physics, Vol. 100, No. 11, 01.01.1994, p. 8437-8443.

Research output: Contribution to journalArticle

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