Electronic properties of aluminum/CdZnTe interfaces

Xuxu Bai, Wanqi Jie, Gangqiang Zha, Wenhua Zhang, Junfa Zhu, Tao Wang, Dong Qian, Ying Liu, Jinfeng Jia

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.

Original languageEnglish (US)
Article number211602
JournalApplied Physics Letters
Volume102
Issue number21
DOIs
StatePublished - Jun 24 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Bai, X., Jie, W., Zha, G., Zhang, W., Zhu, J., Wang, T., Qian, D., Liu, Y., & Jia, J. (2013). Electronic properties of aluminum/CdZnTe interfaces. Applied Physics Letters, 102(21), [211602]. https://doi.org/10.1063/1.4804365