Electronic properties of sol-gel-derived oxides on silicon

R. A. Weimer, P. M. Lenahan, T. A. Marchione, C. J. Brinker

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Abstract

Sol-gel-derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000°C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as ∼1×1011/cm2 eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.

Original languageEnglish (US)
Pages (from-to)1179-1181
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number15
DOIs
Publication statusPublished - Dec 1 1987

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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