Abstract
Sol-gel-derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000°C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as ∼1×1011/cm2 eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.
Original language | English (US) |
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Pages (from-to) | 1179-1181 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 51 |
Issue number | 15 |
DOIs | |
State | Published - Dec 1 1987 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)