Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

Osama O. Awadelkarim, T. Gu, P. I. Mikulan, R. A. Ditizio, S. J. Fonash, K. A. Reinhardt, Y. D. Chan

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.

Original languageEnglish (US)
Pages (from-to)958-960
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number9
DOIs
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen'. Together they form a unique fingerprint.

Cite this