Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

Osama O. Awadelkarim, T. Gu, P. I. Mikulan, R. A. Ditizio, S. J. Fonash, K. A. Reinhardt, Y. D. Chan

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.

Original languageEnglish (US)
Pages (from-to)958-960
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number9
DOIs
StatePublished - Dec 1 1993

Fingerprint

plasma etching
point defects
interstitials
etching
impurities
hydrogen
electronics
deactivation
ions
boron
binding energy
carbon
oxygen
profiles
magnetic fields
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Awadelkarim, Osama O. ; Gu, T. ; Mikulan, P. I. ; Ditizio, R. A. ; Fonash, S. J. ; Reinhardt, K. A. ; Chan, Y. D. / Electronic states created in p-Si subjected to plasma etching : The role of inherent impurities, point defects, and hydrogen. In: Applied Physics Letters. 1993 ; Vol. 62, No. 9. pp. 958-960.
@article{eb63c0a0ef4b4afd9c8a922cafda589e,
title = "Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen",
abstract = "Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.",
author = "Awadelkarim, {Osama O.} and T. Gu and Mikulan, {P. I.} and Ditizio, {R. A.} and Fonash, {S. J.} and Reinhardt, {K. A.} and Chan, {Y. D.}",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.108532",
language = "English (US)",
volume = "62",
pages = "958--960",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Electronic states created in p-Si subjected to plasma etching : The role of inherent impurities, point defects, and hydrogen. / Awadelkarim, Osama O.; Gu, T.; Mikulan, P. I.; Ditizio, R. A.; Fonash, S. J.; Reinhardt, K. A.; Chan, Y. D.

In: Applied Physics Letters, Vol. 62, No. 9, 01.12.1993, p. 958-960.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic states created in p-Si subjected to plasma etching

T2 - The role of inherent impurities, point defects, and hydrogen

AU - Awadelkarim, Osama O.

AU - Gu, T.

AU - Mikulan, P. I.

AU - Ditizio, R. A.

AU - Fonash, S. J.

AU - Reinhardt, K. A.

AU - Chan, Y. D.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.

AB - Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=33847530410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847530410&partnerID=8YFLogxK

U2 - 10.1063/1.108532

DO - 10.1063/1.108532

M3 - Article

AN - SCOPUS:33847530410

VL - 62

SP - 958

EP - 960

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -