Electronic structure and transport properties of CoSb3: a narrow band-gap semiconductor

Jorge Osvaldo Sofo, G. D. Mahan

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

We report calculations which show that the band structure of CoSb3 is typical of a narrow band-gap semiconductor. The gap is strongly dependent on the relative position of the Sb atoms inside the unit cell. We obtain a band gap of 0.22 eV after minimization of these position. This value is more than four times larger than the result of a previous calculation which reported that the energy bands near the Fermi surface are unusual. The electronic states close to the Fermi level are properly described by a two-band Kane Model. The calculated effective masses and band gap are in excellent agreement with Shubnikov de Haas and Hall effect measurements. Recent measurements of the transport coefficients of this compound can be understood assuming it is a narrow band gap semiconductor, in agreement with our results.

Original languageEnglish (US)
Pages (from-to)315-320
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume545
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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