Electronic structure of BaPb1-xBixO3

Jorge Osvaldo Sofo, A. A. Aligia, M. D. Núez Regueiro

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The electronic structure of BaPb1-xBixO3 is calculated taking into account the local disproportionation of the Bi atoms within the coherent-potential approximation. Three different regimes are obtained as a function of the Bi concentration x: normal metal, metallic with a pseudogap, and insulating phase. This allows a satisfactory interpretation of the optical properties, resistivity, Hall, and Seebeck measurements. The agreement is improved when the many-body effects due to the covalency of the Bi-O bonding, invoked previously for the superconductivity, are also considered.

Original languageEnglish (US)
Pages (from-to)9701-9703
Number of pages3
JournalPhysical Review B
Volume39
Issue number13
DOIs
StatePublished - Jan 1 1989

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superconductivity
electronic structure
optical properties
electrical resistivity
approximation
metals
atoms

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Sofo, J. O., Aligia, A. A., & Núez Regueiro, M. D. (1989). Electronic structure of BaPb1-xBixO3. Physical Review B, 39(13), 9701-9703. https://doi.org/10.1103/PhysRevB.39.9701
Sofo, Jorge Osvaldo ; Aligia, A. A. ; Núez Regueiro, M. D. / Electronic structure of BaPb1-xBixO3. In: Physical Review B. 1989 ; Vol. 39, No. 13. pp. 9701-9703.
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Sofo, JO, Aligia, AA & Núez Regueiro, MD 1989, 'Electronic structure of BaPb1-xBixO3', Physical Review B, vol. 39, no. 13, pp. 9701-9703. https://doi.org/10.1103/PhysRevB.39.9701

Electronic structure of BaPb1-xBixO3. / Sofo, Jorge Osvaldo; Aligia, A. A.; Núez Regueiro, M. D.

In: Physical Review B, Vol. 39, No. 13, 01.01.1989, p. 9701-9703.

Research output: Contribution to journalArticle

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