Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Fabian Arnold, Jonas Warmuth, Matteo Michiardi, Jan Fikáček, Marco Bianchi, Jin Hu, Zhiqiang Mao, Jill Miwa, Udai Raj Singh, Martin Bremholm, Roland Wiesendanger, Jan Honolka, Tim Wehling, Jens Wiebe, Philip Hofmann

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Original languageEnglish (US)
Article number065502
JournalJournal of Physics Condensed Matter
Volume30
Issue number6
DOIs
StatePublished - Jan 12 2018

Fingerprint

Epitaxial films
Electronic structure
electronic structure
Thin films
Crystals
thin films
crystals
Substrates
Doping (additives)
photoelectric emission
Alkalies
Photoemission
Scanning tunneling microscopy
Film growth
Photoelectron spectroscopy
Fermi level
scanning tunneling microscopy
alkalies
electron transfer
indication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Arnold, F., Warmuth, J., Michiardi, M., Fikáček, J., Bianchi, M., Hu, J., ... Hofmann, P. (2018). Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3. Journal of Physics Condensed Matter, 30(6), [065502]. https://doi.org/10.1088/1361-648X/aaa43e
Arnold, Fabian ; Warmuth, Jonas ; Michiardi, Matteo ; Fikáček, Jan ; Bianchi, Marco ; Hu, Jin ; Mao, Zhiqiang ; Miwa, Jill ; Raj Singh, Udai ; Bremholm, Martin ; Wiesendanger, Roland ; Honolka, Jan ; Wehling, Tim ; Wiebe, Jens ; Hofmann, Philip. / Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3. In: Journal of Physics Condensed Matter. 2018 ; Vol. 30, No. 6.
@article{bbafb0600c314270a08ec85c083e0a8b,
title = "Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3",
abstract = "The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.",
author = "Fabian Arnold and Jonas Warmuth and Matteo Michiardi and Jan Fik{\'a}ček and Marco Bianchi and Jin Hu and Zhiqiang Mao and Jill Miwa and {Raj Singh}, Udai and Martin Bremholm and Roland Wiesendanger and Jan Honolka and Tim Wehling and Jens Wiebe and Philip Hofmann",
year = "2018",
month = "1",
day = "12",
doi = "10.1088/1361-648X/aaa43e",
language = "English (US)",
volume = "30",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "6",

}

Arnold, F, Warmuth, J, Michiardi, M, Fikáček, J, Bianchi, M, Hu, J, Mao, Z, Miwa, J, Raj Singh, U, Bremholm, M, Wiesendanger, R, Honolka, J, Wehling, T, Wiebe, J & Hofmann, P 2018, 'Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3', Journal of Physics Condensed Matter, vol. 30, no. 6, 065502. https://doi.org/10.1088/1361-648X/aaa43e

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3. / Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Raj Singh, Udai; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip.

In: Journal of Physics Condensed Matter, Vol. 30, No. 6, 065502, 12.01.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

AU - Arnold, Fabian

AU - Warmuth, Jonas

AU - Michiardi, Matteo

AU - Fikáček, Jan

AU - Bianchi, Marco

AU - Hu, Jin

AU - Mao, Zhiqiang

AU - Miwa, Jill

AU - Raj Singh, Udai

AU - Bremholm, Martin

AU - Wiesendanger, Roland

AU - Honolka, Jan

AU - Wehling, Tim

AU - Wiebe, Jens

AU - Hofmann, Philip

PY - 2018/1/12

Y1 - 2018/1/12

N2 - The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

AB - The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

UR - http://www.scopus.com/inward/record.url?scp=85040912099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040912099&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/aaa43e

DO - 10.1088/1361-648X/aaa43e

M3 - Article

AN - SCOPUS:85040912099

VL - 30

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 6

M1 - 065502

ER -