Electrostrictive strain in low-permittivity dielectrics

Rattikorn Yimnirun, Paul J. Moses, Robert E. Newnham, Richard J. Meyer

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

A single-beam interferometer capable of resolving displacements on the order of 10-4 Å was used to examine the field-induced displacement in several low-permittivity dielectric materials. The experimental principle and procedures of the single-beam interferometer are described in this article. The importance and the accuracy of the Maxwell stress and the thermal stress corrections are also discussed. We present in this article the field-induced strains and the apparent electrostrictive coefficients of several common dielectric materials, including Al2O3, BgO, MgO, AlN ceramics, and SiO2 glass. Under application of an electric field, these common ceramic materials become thicker in the field direction, while glasses and glass-ceramics get thinner. The magnitude of the displacements varies between 10-2 to 10-3 Å under 1 MV/m electric field. By comparison, the field-induced displacements in these common electronic materials are approximately 3 to 5 orders of magnitude smaller than those observed in relaxor materials, such as PMN and PVDF, and soft polymers.

Original languageEnglish (US)
Pages (from-to)87-98
Number of pages12
JournalJournal of Electroceramics
Volume8
Issue number2
DOIs
StatePublished - Aug 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrostrictive strain in low-permittivity dielectrics'. Together they form a unique fingerprint.

Cite this