Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

Binbin Weng, Fanghai Zhao, Jiangang Ma, Guangzhe Yu, Jian Xu, Zhisheng Shi

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A high-quality as-grown PbSe film with a record low threading dislocation density of 9× 105 cm-2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.

Original languageEnglish (US)
Article number251911
JournalApplied Physics Letters
Volume96
Issue number25
DOIs
StatePublished - Jun 21 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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