Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

Shichen Fu, Kyungnam Kang, Kamran Shayan, Anthony Yoshimura, Siamak Dadras, Xiaotian Wang, Lihua Zhang, Siwei Chen, Na Liu, Apoorv Jindal, Xiangzhi Li, Abhay N. Pasupathy, A. Nick Vamivakas, Vincent Meunier, Stefan Strauf, Eui Hyeok Yang

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS2. Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature.

Original languageEnglish (US)
Article number2034
JournalNature communications
Issue number1
StatePublished - Dec 1 2020

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)


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