Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

M. K. Hudait, Y. Zhu, D. Maurya, S. Priya

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Abstract

The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 ± 0.05 eV. The extracted conduction band offset value was 2.66 ± 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Original languageEnglish (US)
Article number093109
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
StatePublished - Mar 4 2013

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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