We propose an energy barrier model of Static Random Access Memory (SRAM). The model provides useful insights about memory error rates for write, read, and retention. We introduce the concept of intrinsic energy margin induced write failure. The proposed model is employed for evaluating various write and read assist mechanisms and their potential in modulating the memory failures. Our analysis reveals that this model is very effective in predicting the behavior of SRAM stability and can be used as a tool to expedite the early phases of design to build assist circuits. Additionally, it can also be used to optimize energy dissipation of SRAM cache.
|Original language||English (US)|
|Number of pages||10|
|Journal||IEEE Transactions on Circuits and Systems I: Regular Papers|
|State||Published - Aug 2014|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering