Energy level of the nitrogen dangling bond in amorphous silicon nitride

W. L. Warren, J. Kanicki, J. Robertson, P. M. Lenahan

Research output: Contribution to journalArticle

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Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Original languageEnglish (US)
Pages (from-to)1699-1701
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number14
DOIs
StatePublished - Dec 1 1991

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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