Energy quantization on the current-voltage characteristic of nanoscale two-dimensional mosfet

Eng Siew Kang, Muhammad Taghi Ahmadi, Sohail Anwar, Razali Ismail

Research output: Contribution to journalArticle

Abstract

The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.

Original languageEnglish (US)
Article number1350077
JournalInternational Journal of Modern Physics B
Volume27
Issue number17
DOIs
StatePublished - Jul 10 2013

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electric potential
saturation
field effect transistors
energy
ballistics
charge carriers
electric fields

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

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abstract = "The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.",
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Energy quantization on the current-voltage characteristic of nanoscale two-dimensional mosfet. / Kang, Eng Siew; Ahmadi, Muhammad Taghi; Anwar, Sohail; Ismail, Razali.

In: International Journal of Modern Physics B, Vol. 27, No. 17, 1350077, 10.07.2013.

Research output: Contribution to journalArticle

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