Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

A. G. Petrov, S. V. Rotkin

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.

Original languageEnglish (US)
Pages (from-to)156-160
Number of pages5
JournalJETP Letters
Volume84
Issue number3
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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