Energy resolved spin dependent trap assisted tunneling investigation of silc related defects

J. T. Ryan, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate energy resolved spin dependent trap assisted tunneling in 1.2nm effective oxide thickness silicon oxynitride film subject to room temperature electric field stressing. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way. We obtain defect energy level resolution of SILC related defects by exploiting the enormous difference between the capacitance of the very thin dielectric and the capacitance of the depletion of the silicon. The simplicity of the technique and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in microelectronics.

Original languageEnglish (US)
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages1122-1125
Number of pages4
DOIs
StatePublished - Oct 20 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: May 2 2010May 6 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period5/2/105/6/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ryan, J. T., Lenahan, P. M., Krishnan, A. T., & Krishnan, S. (2010). Energy resolved spin dependent trap assisted tunneling investigation of silc related defects. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 1122-1125). [5488660] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488660