Energy resolved spin dependent tunneling in 1.2 nm dielectrics

J. T. Ryan, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We demonstrate an electron paramagnetic resonance technique which simply links point defect structure and energy levels in a very direct way. The technique's simplicity and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in solid state electronics. Since the specific defect observed is generated in silicon oxynitride by high electric field stressing, an important device instability problem in present day integrated circuitry, the observations are of considerable importance for microelectronics technology.

Original languageEnglish (US)
Article number103503
JournalApplied Physics Letters
Volume95
Issue number10
DOIs
StatePublished - Sep 18 2009

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oxynitrides
defects
microelectronics
point defects
electron paramagnetic resonance
energy levels
solid state
electric fields
energy
silicon
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ryan, J. T. ; Lenahan, Patrick M. ; Krishnan, A. T. ; Krishnan, S. / Energy resolved spin dependent tunneling in 1.2 nm dielectrics. In: Applied Physics Letters. 2009 ; Vol. 95, No. 10.
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Energy resolved spin dependent tunneling in 1.2 nm dielectrics. / Ryan, J. T.; Lenahan, Patrick M.; Krishnan, A. T.; Krishnan, S.

In: Applied Physics Letters, Vol. 95, No. 10, 103503, 18.09.2009.

Research output: Contribution to journalArticle

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