Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures

Shruti Subramania, Ke Xu, Simon K. Moser, Donna Deng, Jun Li, Randall M. Feenstra, Susan K. Fullerton-Shirey, Joshua A. Robinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Engineering p-n junctions in two-dimensional (2D) materials, specifically transition metal dichalcogenides (TMDs), entails choosing the right combination of materials in order to form the appropriate alignment of bands. A bi-polar junction having a heterogenous combinations of materials has traditionally been used for several applications such as rectifiers, photovoltaics, etc, which require separation of charge carriers. Various researchers have studied the synthesis and properties of p-n junctions in TMD-TMD heterostructures, like MoS/WSe, Mos/ws, etc.1 In this work, we show the formation of a low resistance p-n junction between graphene and molybdenum disulfide (MOS), which harnesses the high thermal and electronic mobility of graphene, which semiconducting TMDs do not provide. Our work employs epitaxial graphene (EG) on silicon carbide substrates, which has the unique property of doping modulation using hydrogen intercalation.2,3 This has not been exploited previously to construct devices using graphene-based heterostructures.

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-84
Number of pages2
ISBN (Electronic)9781728121123
DOIs
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2019-June
ISSN (Print)1548-3770

Conference

Conference2019 Device Research Conference, DRC 2019
CountryUnited States
CityAnn Arbor
Period6/23/196/26/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Subramania, S., Xu, K., Moser, S. K., Deng, D., Li, J., Feenstra, R. M., Fullerton-Shirey, S. K., & Robinson, J. A. (2019). Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures. In 2019 Device Research Conference, DRC 2019 (pp. 83-84). [9046431] (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046431