Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon

A. N. Nazarov, V. M. Pinchuk, V. S. Lysenko, T. V. Yanchuk, S. Ashok

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Abstract

We propose a physical model for enhanced activation of (implanted) dopant atoms in crystalline Si when the Si vacancy contains atomic hydrogen. Calculations of the potential barriers for inserting the interstitial phosphorus dopant into both hydrogenated and unhydrogenated vacancy sites of the crystalline Si dependent on the charge state of the hydrogenated vacancy, the hydrogen localization, and the transport direction of the interstitial atom to the vacancy are reported using the self-consistent field molecular-orbital linear combination of atomic orbitals technique in the neglect of diatomic differential overlap approach. The results suggest a decrease of the activation temperature for the phosphorus atoms by more than 300°C.

Original languageEnglish (US)
Pages (from-to)3522-3525
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number7
StatePublished - Aug 15 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Nazarov, A. N., Pinchuk, V. M., Lysenko, V. S., Yanchuk, T. V., & Ashok, S. (1998). Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon. Physical Review B - Condensed Matter and Materials Physics, 58(7), 3522-3525.