Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary

Xiaoyu Kang, Smitha Shetty, Lauren Garten, Jon F. Ihlefeld, Susan Trolier-McKinstry, Jon Paul Maria

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. The enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.

Original languageEnglish (US)
Article number042903
JournalApplied Physics Letters
Volume110
Issue number4
DOIs
StatePublished - Jan 23 2017

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textures
thin films
coefficients
tangents
dielectric loss
wurtzite
pulsed laser deposition
phase transformations
dielectric properties
sapphire
engineering
permittivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{ef90d32a4e9541868b1c41daea383472,
title = "Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary",
abstract = "Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40{\%}; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360{\%} and 290{\%}, respectively. The increase in piezoelectric coefficients is accompanied by a 35{\%} increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. The enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.",
author = "Xiaoyu Kang and Smitha Shetty and Lauren Garten and Ihlefeld, {Jon F.} and Susan Trolier-McKinstry and Maria, {Jon Paul}",
year = "2017",
month = "1",
day = "23",
doi = "10.1063/1.4973756",
language = "English (US)",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary. / Kang, Xiaoyu; Shetty, Smitha; Garten, Lauren; Ihlefeld, Jon F.; Trolier-McKinstry, Susan; Maria, Jon Paul.

In: Applied Physics Letters, Vol. 110, No. 4, 042903, 23.01.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary

AU - Kang, Xiaoyu

AU - Shetty, Smitha

AU - Garten, Lauren

AU - Ihlefeld, Jon F.

AU - Trolier-McKinstry, Susan

AU - Maria, Jon Paul

PY - 2017/1/23

Y1 - 2017/1/23

N2 - Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. The enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.

AB - Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. The enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.

UR - http://www.scopus.com/inward/record.url?scp=85010727496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010727496&partnerID=8YFLogxK

U2 - 10.1063/1.4973756

DO - 10.1063/1.4973756

M3 - Article

AN - SCOPUS:85010727496

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042903

ER -