Enhanced dielectric tunability in barium titanate thin films with boron additions

Jon F. Ihlefeld, William J. Borland, Jon-Paul Maria

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Boron incorporation in 650 nm thick polycrystalline BaTiO3 films results in grain growth and dramatic dielectric response improvements. For levels between 0% and 3%, average grain size is increased from 150 to 200 nm and the maximum permittivity values are nearly doubled, with tunabilities increased to greater than 90% while maintaining high field loss tangents below 0.03. These results demonstrate a pathway for microstructure engineering and property optimization in refractory electroceramic oxide thin films without increasing the thermal budget.

Original languageEnglish (US)
Pages (from-to)549-552
Number of pages4
JournalScripta Materialia
Volume58
Issue number7
DOIs
StatePublished - Apr 1 2008

Fingerprint

Barium titanate
Boron
refractories
Grain growth
tangents
budgets
Refractory materials
Oxide films
barium
boron
Permittivity
grain size
engineering
permittivity
Thin films
microstructure
Microstructure
optimization
oxides
thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

Cite this

Ihlefeld, Jon F. ; Borland, William J. ; Maria, Jon-Paul. / Enhanced dielectric tunability in barium titanate thin films with boron additions. In: Scripta Materialia. 2008 ; Vol. 58, No. 7. pp. 549-552.
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Enhanced dielectric tunability in barium titanate thin films with boron additions. / Ihlefeld, Jon F.; Borland, William J.; Maria, Jon-Paul.

In: Scripta Materialia, Vol. 58, No. 7, 01.04.2008, p. 549-552.

Research output: Contribution to journalArticle

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