Enhanced domain contribution to ferroelectric properties in freestanding thick films

Jungho Ryu, Shashank Priya, Chee Sung Park, Kun Young Kim, Jong Jin Choi, Byung Dong Hahn, Woon Ha Yoon, Byoung Kuk Lee, Dong Soo Park, Chan Park

Research output: Contribution to journalArticle

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Abstract

We report the success in fabricating clamped, island, and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/ SiO2 /Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.

Original languageEnglish (US)
Article number024108
JournalJournal of Applied Physics
Volume106
Issue number2
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Ryu, J., Priya, S., Park, C. S., Kim, K. Y., Choi, J. J., Hahn, B. D., Yoon, W. H., Lee, B. K., Park, D. S., & Park, C. (2009). Enhanced domain contribution to ferroelectric properties in freestanding thick films. Journal of Applied Physics, 106(2), [024108]. https://doi.org/10.1063/1.3181058