Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer

Tom H. Anderson, Tom G. Mackay, Akhlesh Lakhtakia

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n-doped indium gallium nitride (InξGa1-ξN) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the InξGa1-ξN layer was varied periodically in the thickness direction by varying the parameter ξ ∈ 0;1. First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron-hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities. Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the InξGa1-ξN layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous InξGa1-ξN layer may be higher by as much as 26.8% compared to the analogous solar cell with a homogeneous InξGa1-ξN layer.

Original languageEnglish (US)
Article number14502
JournalJournal of Photonics for Energy
Volume7
Issue number1
DOIs
StatePublished - Jan 1 2017

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Gallium nitride
gallium nitrides
Indium
indium
Solar cells
solar cells
Photons
reflectors
solar flux
Optoelectronic devices
solar spectra
Electron energy levels
photons
axioms
Energy gap
Fluxes
Electrons
Metals
profiles
metals

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment

Cite this

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title = "Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer",
abstract = "A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n-doped indium gallium nitride (InξGa1-ξN) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the InξGa1-ξN layer was varied periodically in the thickness direction by varying the parameter ξ ∈ 0;1. First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron-hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities. Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the InξGa1-ξN layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous InξGa1-ξN layer may be higher by as much as 26.8{\%} compared to the analogous solar cell with a homogeneous InξGa1-ξN layer.",
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Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer. / Anderson, Tom H.; Mackay, Tom G.; Lakhtakia, Akhlesh.

In: Journal of Photonics for Energy, Vol. 7, No. 1, 14502, 01.01.2017.

Research output: Contribution to journalArticle

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