Thin films of VO x (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO x samples. The resistivity of nanotwinned VO x films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1 and -2.6 per K, respectively. The 1/f electrical noise was analyzed in these VO x samples using the Hooge-Vandamme relation. These VO x films are comparable or surpass commercial VO x films deposited by ion beam sputtering.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)