Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film

Zhenxiang Cheng, Xiaolin Wang, Chinna Venkatasamy Kannan, Kyoshi Ozawa, Hideo Kimura, Takashi Nishida, Shujun Zhang, Thomas R. Shrout

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.

Original languageEnglish (US)
Article number132909
JournalApplied Physics Letters
Volume88
Issue number13
DOIs
StatePublished - Apr 10 2006

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moments
augmentation
polarization
barrier layers
thin films
bismuth
pulsed laser deposition
magnetic moments
magnetization
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cheng, Zhenxiang ; Wang, Xiaolin ; Kannan, Chinna Venkatasamy ; Ozawa, Kyoshi ; Kimura, Hideo ; Nishida, Takashi ; Zhang, Shujun ; Shrout, Thomas R. / Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film. In: Applied Physics Letters. 2006 ; Vol. 88, No. 13.
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abstract = "Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.",
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Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film. / Cheng, Zhenxiang; Wang, Xiaolin; Kannan, Chinna Venkatasamy; Ozawa, Kyoshi; Kimura, Hideo; Nishida, Takashi; Zhang, Shujun; Shrout, Thomas R.

In: Applied Physics Letters, Vol. 88, No. 13, 132909, 10.04.2006.

Research output: Contribution to journalArticle

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AU - Cheng, Zhenxiang

AU - Wang, Xiaolin

AU - Kannan, Chinna Venkatasamy

AU - Ozawa, Kyoshi

AU - Kimura, Hideo

AU - Nishida, Takashi

AU - Zhang, Shujun

AU - Shrout, Thomas R.

PY - 2006/4/10

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