Enhanced electrocaloric effect in a Si-doped PbZr0.95Ti0.05O3 film deposited on FTO substrate

Jinxin Wang, Guicheng Jiang, Weicheng Huang, Danqing Liu, Bin Yang, Wenwu Cao

Research output: Contribution to journalArticle

Abstract

Materials with an electrocaloric effect (ECE) have been extensively studied for their cooling applications. Most ECE films are oriented and are difficult to integrate into industrial production processes. Here, an ECE (ΔS = 4.48 J K-1kg-1 and ΔT = 6.4 °C at ΔE = 390 kV cm-1) is obtained in an unoriented PbZr0.95Ti0.05O3 (PZT) film fabricated on an FTO substrate using an improved sol-gel method. To improve the ECE, Si-doped PZT films with 1-4 mol. % of Si are deposited. X-ray diffraction and X-ray photoelectron spectroscopy results confirm that Si was doped into the PZT lattice. The orthorhombic and tetragonal antiferroelectric phases coexist in the PZT/0.01 Si film. A large ECE (ΔS = 5.89 J K-1kg-1 and ΔT = 8.5 °C at ΔE = 390 kV cm-1) is acquired in the PZT/0.01 Si film, which was measured by an indirect method. This work demonstrates that ECE of unoriented PZT antiferroelectric films on FTO substrates can be improved by a certain amount of Si doping.

Original languageEnglish (US)
Article number053901
JournalApplied Physics Letters
Volume115
Issue number5
DOIs
StatePublished - Jul 29 2019

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x rays
photoelectron spectroscopy
gels
cooling
diffraction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Wang, Jinxin ; Jiang, Guicheng ; Huang, Weicheng ; Liu, Danqing ; Yang, Bin ; Cao, Wenwu. / Enhanced electrocaloric effect in a Si-doped PbZr0.95Ti0.05O3 film deposited on FTO substrate. In: Applied Physics Letters. 2019 ; Vol. 115, No. 5.
@article{4497662a9b1a4492ae81d1a0c0cccf78,
title = "Enhanced electrocaloric effect in a Si-doped PbZr0.95Ti0.05O3 film deposited on FTO substrate",
abstract = "Materials with an electrocaloric effect (ECE) have been extensively studied for their cooling applications. Most ECE films are oriented and are difficult to integrate into industrial production processes. Here, an ECE (ΔS = 4.48 J K-1kg-1 and ΔT = 6.4 °C at ΔE = 390 kV cm-1) is obtained in an unoriented PbZr0.95Ti0.05O3 (PZT) film fabricated on an FTO substrate using an improved sol-gel method. To improve the ECE, Si-doped PZT films with 1-4 mol. {\%} of Si are deposited. X-ray diffraction and X-ray photoelectron spectroscopy results confirm that Si was doped into the PZT lattice. The orthorhombic and tetragonal antiferroelectric phases coexist in the PZT/0.01 Si film. A large ECE (ΔS = 5.89 J K-1kg-1 and ΔT = 8.5 °C at ΔE = 390 kV cm-1) is acquired in the PZT/0.01 Si film, which was measured by an indirect method. This work demonstrates that ECE of unoriented PZT antiferroelectric films on FTO substrates can be improved by a certain amount of Si doping.",
author = "Jinxin Wang and Guicheng Jiang and Weicheng Huang and Danqing Liu and Bin Yang and Wenwu Cao",
year = "2019",
month = "7",
day = "29",
doi = "10.1063/1.5093697",
language = "English (US)",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Enhanced electrocaloric effect in a Si-doped PbZr0.95Ti0.05O3 film deposited on FTO substrate. / Wang, Jinxin; Jiang, Guicheng; Huang, Weicheng; Liu, Danqing; Yang, Bin; Cao, Wenwu.

In: Applied Physics Letters, Vol. 115, No. 5, 053901, 29.07.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrocaloric effect in a Si-doped PbZr0.95Ti0.05O3 film deposited on FTO substrate

AU - Wang, Jinxin

AU - Jiang, Guicheng

AU - Huang, Weicheng

AU - Liu, Danqing

AU - Yang, Bin

AU - Cao, Wenwu

PY - 2019/7/29

Y1 - 2019/7/29

N2 - Materials with an electrocaloric effect (ECE) have been extensively studied for their cooling applications. Most ECE films are oriented and are difficult to integrate into industrial production processes. Here, an ECE (ΔS = 4.48 J K-1kg-1 and ΔT = 6.4 °C at ΔE = 390 kV cm-1) is obtained in an unoriented PbZr0.95Ti0.05O3 (PZT) film fabricated on an FTO substrate using an improved sol-gel method. To improve the ECE, Si-doped PZT films with 1-4 mol. % of Si are deposited. X-ray diffraction and X-ray photoelectron spectroscopy results confirm that Si was doped into the PZT lattice. The orthorhombic and tetragonal antiferroelectric phases coexist in the PZT/0.01 Si film. A large ECE (ΔS = 5.89 J K-1kg-1 and ΔT = 8.5 °C at ΔE = 390 kV cm-1) is acquired in the PZT/0.01 Si film, which was measured by an indirect method. This work demonstrates that ECE of unoriented PZT antiferroelectric films on FTO substrates can be improved by a certain amount of Si doping.

AB - Materials with an electrocaloric effect (ECE) have been extensively studied for their cooling applications. Most ECE films are oriented and are difficult to integrate into industrial production processes. Here, an ECE (ΔS = 4.48 J K-1kg-1 and ΔT = 6.4 °C at ΔE = 390 kV cm-1) is obtained in an unoriented PbZr0.95Ti0.05O3 (PZT) film fabricated on an FTO substrate using an improved sol-gel method. To improve the ECE, Si-doped PZT films with 1-4 mol. % of Si are deposited. X-ray diffraction and X-ray photoelectron spectroscopy results confirm that Si was doped into the PZT lattice. The orthorhombic and tetragonal antiferroelectric phases coexist in the PZT/0.01 Si film. A large ECE (ΔS = 5.89 J K-1kg-1 and ΔT = 8.5 °C at ΔE = 390 kV cm-1) is acquired in the PZT/0.01 Si film, which was measured by an indirect method. This work demonstrates that ECE of unoriented PZT antiferroelectric films on FTO substrates can be improved by a certain amount of Si doping.

UR - http://www.scopus.com/inward/record.url?scp=85070065622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070065622&partnerID=8YFLogxK

U2 - 10.1063/1.5093697

DO - 10.1063/1.5093697

M3 - Article

AN - SCOPUS:85070065622

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053901

ER -