Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Nevin N. Naguib, Jeffrey W. Elam, James Birrell, Jian Wang, David S. Grierson, Bernd C. Kabius, Jon M. Hiller, Anirudha V. Sumant, Robert W. Carpick, Orlando Auciello, John A. Carlisle

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalChemical Physics Letters
Volume430
Issue number4-6
DOIs
StatePublished - Oct 30 2006

Fingerprint

Tungsten
Ultrathin films
Diamond films
diamond films
interlayers
tungsten
Nucleation
nucleation
Surface roughness
Diamond
Structural optimization
Silicon
Substrates
voids
Chemical vapor deposition
surface roughness
roughness
Carbon
diamonds
Microwaves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Naguib, N. N., Elam, J. W., Birrell, J., Wang, J., Grierson, D. S., Kabius, B. C., ... Carlisle, J. A. (2006). Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers. Chemical Physics Letters, 430(4-6), 345-350. https://doi.org/10.1016/j.cplett.2006.08.137
Naguib, Nevin N. ; Elam, Jeffrey W. ; Birrell, James ; Wang, Jian ; Grierson, David S. ; Kabius, Bernd C. ; Hiller, Jon M. ; Sumant, Anirudha V. ; Carpick, Robert W. ; Auciello, Orlando ; Carlisle, John A. / Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers. In: Chemical Physics Letters. 2006 ; Vol. 430, No. 4-6. pp. 345-350.
@article{e96f6436180c4355ba6ba48597f05323,
title = "Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers",
abstract = "Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.",
author = "Naguib, {Nevin N.} and Elam, {Jeffrey W.} and James Birrell and Jian Wang and Grierson, {David S.} and Kabius, {Bernd C.} and Hiller, {Jon M.} and Sumant, {Anirudha V.} and Carpick, {Robert W.} and Orlando Auciello and Carlisle, {John A.}",
year = "2006",
month = "10",
day = "30",
doi = "10.1016/j.cplett.2006.08.137",
language = "English (US)",
volume = "430",
pages = "345--350",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "4-6",

}

Naguib, NN, Elam, JW, Birrell, J, Wang, J, Grierson, DS, Kabius, BC, Hiller, JM, Sumant, AV, Carpick, RW, Auciello, O & Carlisle, JA 2006, 'Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers', Chemical Physics Letters, vol. 430, no. 4-6, pp. 345-350. https://doi.org/10.1016/j.cplett.2006.08.137

Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers. / Naguib, Nevin N.; Elam, Jeffrey W.; Birrell, James; Wang, Jian; Grierson, David S.; Kabius, Bernd C.; Hiller, Jon M.; Sumant, Anirudha V.; Carpick, Robert W.; Auciello, Orlando; Carlisle, John A.

In: Chemical Physics Letters, Vol. 430, No. 4-6, 30.10.2006, p. 345-350.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

AU - Naguib, Nevin N.

AU - Elam, Jeffrey W.

AU - Birrell, James

AU - Wang, Jian

AU - Grierson, David S.

AU - Kabius, Bernd C.

AU - Hiller, Jon M.

AU - Sumant, Anirudha V.

AU - Carpick, Robert W.

AU - Auciello, Orlando

AU - Carlisle, John A.

PY - 2006/10/30

Y1 - 2006/10/30

N2 - Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

AB - Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

UR - http://www.scopus.com/inward/record.url?scp=33749553569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749553569&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2006.08.137

DO - 10.1016/j.cplett.2006.08.137

M3 - Article

AN - SCOPUS:33749553569

VL - 430

SP - 345

EP - 350

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 4-6

ER -