Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Nevin N. Naguib, Jeffrey W. Elam, James Birrell, Jian Wang, David S. Grierson, Bernd Kabius, Jon M. Hiller, Anirudha V. Sumant, Robert W. Carpick, Orlando Auciello, John A. Carlisle

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalChemical Physics Letters
Volume430
Issue number4-6
DOIs
StatePublished - Oct 30 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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