Abstract
The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
Original language | English (US) |
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Pages (from-to) | 1501-1504 |
Number of pages | 4 |
Journal | Optics Letters |
Volume | 39 |
Issue number | 6 |
DOIs | |
State | Published - Mar 15 2014 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics