Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Guanjun You; Jie Liu; Zhenyu Jiang; Li Wang; N. A. El-Masry; A. M. Hosalli; Salah M. Bedair; Jian Xu

doi:10.1364/OL.39.001501

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Guanjun You, Jie Liu, Zhenyu Jiang, Li Wang, N. A. El-Masry, A. M. Hosalli, Salah M. Bedair, Jian Xu

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

Original language	English (US)
Pages (from-to)	1501-1504
Number of pages	4
Journal	Optics Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1364/OL.39.001501
State	Published - Mar 15 2014

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OL.39.001501

Cite this

@article{dd895ac78ec3486b80fbefa39e8259c5,

title = "Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires",

abstract = "The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.",

author = "Guanjun You and Jie Liu and Zhenyu Jiang and Li Wang and El-Masry, {N. A.} and Hosalli, {A. M.} and Bedair, {Salah M.} and Jian Xu",

year = "2014",

month = mar,

day = "15",

doi = "10.1364/OL.39.001501",

language = "English (US)",

volume = "39",

pages = "1501--1504",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "The Optical Society",

number = "6",

}

TY - JOUR

T1 - Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

AU - You, Guanjun

AU - Liu, Jie

AU - Jiang, Zhenyu

AU - Wang, Li

AU - El-Masry, N. A.

AU - Hosalli, A. M.

AU - Bedair, Salah M.

AU - Xu, Jian

PY - 2014/3/15

Y1 - 2014/3/15

N2 - The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

AB - The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

UR - http://www.scopus.com/inward/record.url?scp=84897460380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897460380&partnerID=8YFLogxK

U2 - 10.1364/OL.39.001501

DO - 10.1364/OL.39.001501

M3 - Article

AN - SCOPUS:84897460380

VL - 39

SP - 1501

EP - 1504

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 6

ER -

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this