Abstract
The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1501-1504 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 39 |
| Issue number | 6 |
| DOIs | |
| State | Published - Mar 15 2014 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
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Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. / You, Guanjun; Liu, Jie; Jiang, Zhenyu; Wang, Li; El-Masry, N. A.; Hosalli, A. M.; Bedair, Salah M.; Xu, Jian.
In: Optics Letters, Vol. 39, No. 6, 15.03.2014, p. 1501-1504.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires
AU - You, Guanjun
AU - Liu, Jie
AU - Jiang, Zhenyu
AU - Wang, Li
AU - El-Masry, N. A.
AU - Hosalli, A. M.
AU - Bedair, Salah M.
AU - Xu, Jian
PY - 2014/3/15
Y1 - 2014/3/15
N2 - The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
AB - The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
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U2 - 10.1364/OL.39.001501
DO - 10.1364/OL.39.001501
M3 - Article
VL - 39
SP - 1501
EP - 1504
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 6
ER -