Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Guanjun You, Jie Liu, Zhenyu Jiang, Li Wang, N. A. El-Masry, A. M. Hosalli, Salah M. Bedair, Jian Xu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

Original languageEnglish (US)
Pages (from-to)1501-1504
Number of pages4
JournalOptics Letters
Volume39
Issue number6
DOIs
StatePublished - Mar 15 2014

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radiative recombination
nanowires
quantum wells
photoluminescence
light emission
quantum efficiency
electric fields
augmentation
polarization
excitation
temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

You, Guanjun ; Liu, Jie ; Jiang, Zhenyu ; Wang, Li ; El-Masry, N. A. ; Hosalli, A. M. ; Bedair, Salah M. ; Xu, Jian. / Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. In: Optics Letters. 2014 ; Vol. 39, No. 6. pp. 1501-1504.
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abstract = "The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.",
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Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. / You, Guanjun; Liu, Jie; Jiang, Zhenyu; Wang, Li; El-Masry, N. A.; Hosalli, A. M.; Bedair, Salah M.; Xu, Jian.

In: Optics Letters, Vol. 39, No. 6, 15.03.2014, p. 1501-1504.

Research output: Contribution to journalArticle

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T1 - Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

AU - You, Guanjun

AU - Liu, Jie

AU - Jiang, Zhenyu

AU - Wang, Li

AU - El-Masry, N. A.

AU - Hosalli, A. M.

AU - Bedair, Salah M.

AU - Xu, Jian

PY - 2014/3/15

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AB - The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.

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