Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

M. Eizenberg, A. C. Callegari, D. K. Sadana, H. J. Hovel, Thomas Nelson Jackson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.

Original languageEnglish (US)
Pages (from-to)1696-1698
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
StatePublished - Dec 1 1989

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implantation
augmentation
furnaces
counters
annealing
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Eizenberg, M. ; Callegari, A. C. ; Sadana, D. K. ; Hovel, H. J. ; Jackson, Thomas Nelson. / Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs. In: Applied Physics Letters. 1989 ; Vol. 54, No. 17. pp. 1696-1698.
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Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs. / Eizenberg, M.; Callegari, A. C.; Sadana, D. K.; Hovel, H. J.; Jackson, Thomas Nelson.

In: Applied Physics Letters, Vol. 54, No. 17, 01.12.1989, p. 1696-1698.

Research output: Contribution to journalArticle

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AU - Jackson, Thomas Nelson

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