Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Matthew J. Hollander, Michael Labella, Zachary R. Hughes, Michael Zhu, Kathleen A. Trumbull, Randal Cavalero, David W. Snyder, Xiaojun Wang, Euichul Hwang, Suman Datta, Joshua A. Robinson

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Abstract

We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.

Original languageEnglish (US)
Pages (from-to)3601-3607
Number of pages7
JournalNano letters
Volume11
Issue number9
DOIs
StatePublished - Sep 14 2011

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Hollander, M. J., Labella, M., Hughes, Z. R., Zhu, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Wang, X., Hwang, E., Datta, S., & Robinson, J. A. (2011). Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene. Nano letters, 11(9), 3601-3607. https://doi.org/10.1021/nl201358y