Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Matthew J. Hollander, Michael Labella, Zachary R. Hughes, Michael Zhu, Kathleen A. Trumbull, Randal Cavalero, David W. Snyder, Xiaojun Wang, Euichul Hwang, Suman Datta, Joshua Alexander Robinson

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.

Original languageEnglish (US)
Pages (from-to)3601-3607
Number of pages7
JournalNano Letters
Volume11
Issue number9
DOIs
StatePublished - Sep 14 2011

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Graphite
Gate dielectrics
Oxides
Graphene
graphene
Transistors
transistors
wafers
Seed
seeds
oxides
Carrier transport
Hall mobility
Atomic layer deposition
inoculation
atomic layer epitaxy
purity

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Hollander, Matthew J. ; Labella, Michael ; Hughes, Zachary R. ; Zhu, Michael ; Trumbull, Kathleen A. ; Cavalero, Randal ; Snyder, David W. ; Wang, Xiaojun ; Hwang, Euichul ; Datta, Suman ; Robinson, Joshua Alexander. / Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene. In: Nano Letters. 2011 ; Vol. 11, No. 9. pp. 3601-3607.
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abstract = "We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70{\%} from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40{\%}. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.",
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Hollander, MJ, Labella, M, Hughes, ZR, Zhu, M, Trumbull, KA, Cavalero, R, Snyder, DW, Wang, X, Hwang, E, Datta, S & Robinson, JA 2011, 'Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene', Nano Letters, vol. 11, no. 9, pp. 3601-3607. https://doi.org/10.1021/nl201358y

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene. / Hollander, Matthew J.; Labella, Michael; Hughes, Zachary R.; Zhu, Michael; Trumbull, Kathleen A.; Cavalero, Randal; Snyder, David W.; Wang, Xiaojun; Hwang, Euichul; Datta, Suman; Robinson, Joshua Alexander.

In: Nano Letters, Vol. 11, No. 9, 14.09.2011, p. 3601-3607.

Research output: Contribution to journalArticle

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AU - Hollander, Matthew J.

AU - Labella, Michael

AU - Hughes, Zachary R.

AU - Zhu, Michael

AU - Trumbull, Kathleen A.

AU - Cavalero, Randal

AU - Snyder, David W.

AU - Wang, Xiaojun

AU - Hwang, Euichul

AU - Datta, Suman

AU - Robinson, Joshua Alexander

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