ENHANCE/DEPLETE GaAs SISFETS.

H. Baratte, D. C. La Tulipe, D. J. Frank, P. M. Solomon, Thomas Nelson Jackson, S. L. Wright

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350 mS/mm at 300 K and 380 mS/mm at 77 K, maximum drain current of 350 mA/mm at 300 K and 400 mA/mm at 77 K for 0. 8- mu m gate lengths) and low gate leakage. A drift mobility of 20,000 cm**2V** minus **1s** minus **1 is measured at 77 K for the implanted GaAs SISFETs while 150,000 cm**2V** minus **1s** minus **1 is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are described.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherIEEE
Pages121-134
Number of pages14
StatePublished - 1987

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Drain current
Transconductance
Refractory materials
Heterojunctions
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Baratte, H., La Tulipe, D. C., Frank, D. J., Solomon, P. M., Jackson, T. N., & Wright, S. L. (1987). ENHANCE/DEPLETE GaAs SISFETS. In Unknown Host Publication Title (pp. 121-134). IEEE.
Baratte, H. ; La Tulipe, D. C. ; Frank, D. J. ; Solomon, P. M. ; Jackson, Thomas Nelson ; Wright, S. L. / ENHANCE/DEPLETE GaAs SISFETS. Unknown Host Publication Title. IEEE, 1987. pp. 121-134
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abstract = "As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350 mS/mm at 300 K and 380 mS/mm at 77 K, maximum drain current of 350 mA/mm at 300 K and 400 mA/mm at 77 K for 0. 8- mu m gate lengths) and low gate leakage. A drift mobility of 20,000 cm**2V** minus **1s** minus **1 is measured at 77 K for the implanted GaAs SISFETs while 150,000 cm**2V** minus **1s** minus **1 is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are described.",
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Baratte, H, La Tulipe, DC, Frank, DJ, Solomon, PM, Jackson, TN & Wright, SL 1987, ENHANCE/DEPLETE GaAs SISFETS. in Unknown Host Publication Title. IEEE, pp. 121-134.

ENHANCE/DEPLETE GaAs SISFETS. / Baratte, H.; La Tulipe, D. C.; Frank, D. J.; Solomon, P. M.; Jackson, Thomas Nelson; Wright, S. L.

Unknown Host Publication Title. IEEE, 1987. p. 121-134.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - ENHANCE/DEPLETE GaAs SISFETS.

AU - Baratte, H.

AU - La Tulipe, D. C.

AU - Frank, D. J.

AU - Solomon, P. M.

AU - Jackson, Thomas Nelson

AU - Wright, S. L.

PY - 1987

Y1 - 1987

N2 - As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350 mS/mm at 300 K and 380 mS/mm at 77 K, maximum drain current of 350 mA/mm at 300 K and 400 mA/mm at 77 K for 0. 8- mu m gate lengths) and low gate leakage. A drift mobility of 20,000 cm**2V** minus **1s** minus **1 is measured at 77 K for the implanted GaAs SISFETs while 150,000 cm**2V** minus **1s** minus **1 is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are described.

AB - As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350 mS/mm at 300 K and 380 mS/mm at 77 K, maximum drain current of 350 mA/mm at 300 K and 400 mA/mm at 77 K for 0. 8- mu m gate lengths) and low gate leakage. A drift mobility of 20,000 cm**2V** minus **1s** minus **1 is measured at 77 K for the implanted GaAs SISFETs while 150,000 cm**2V** minus **1s** minus **1 is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are described.

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Baratte H, La Tulipe DC, Frank DJ, Solomon PM, Jackson TN, Wright SL. ENHANCE/DEPLETE GaAs SISFETS. In Unknown Host Publication Title. IEEE. 1987. p. 121-134