Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

A. Agrawal, M. Barth, G. B. Rayner, V. T. Arun, C. Eichfeld, G. Lavallee, S. Y. Yu, X. Sang, S. Brookes, Y. Zheng, Y. J. Lee, Y. R. Lin, C. H. Wu, C. H. Ko, J. LeBeau, R. Engel-Herbert, S. E. Mohney, Y. C. Yeo, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Compressively strained Ge (s-Ge) quantum well (QW) FinFETs with Si0.3Ge0.7 buffer are fabricated on 300mm bulk Si substrate with 20nm WFin and 80nm fin pitch using sidewall image transfer (SIT) patterning process. We demonstrate (a) in-situ process flow for a tri-layer high-κ dielectric HfO2/Al2O3/GeOx gate stack achieving ultrathin EOT of 0.7nm with low DIT and low gate leakage; (b) 1.3% s-Ge FinFETs with Phosphorus doped Si0.3Ge0.7 buffer on bulk Si substrate exhibiting peak μh=700 cm2/Vs, μh=220 cm2/Vs at 1013 /cm2 hole density. The s-Ge FinFETs achieve the highest μ∗Cmax of 3.1×10-4 F/Vs resulting in 5x higher ION over unstrained Ge FinFETs.

Original languageEnglish (US)
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.4.1-16.4.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period12/15/1412/17/14

Fingerprint

Germanium
Hole mobility
hole mobility
Silicon
Semiconductor quantum wells
germanium
buffers
quantum wells
augmentation
silicon
fins
Substrates
phosphorus
Buffers
leakage
Phosphorus
FinFET

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Agrawal, A., Barth, M., Rayner, G. B., Arun, V. T., Eichfeld, C., Lavallee, G., ... Datta, S. (2015). Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 16.4.1-16.4.4). [7047064] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047064
Agrawal, A. ; Barth, M. ; Rayner, G. B. ; Arun, V. T. ; Eichfeld, C. ; Lavallee, G. ; Yu, S. Y. ; Sang, X. ; Brookes, S. ; Zheng, Y. ; Lee, Y. J. ; Lin, Y. R. ; Wu, C. H. ; Ko, C. H. ; LeBeau, J. ; Engel-Herbert, R. ; Mohney, S. E. ; Yeo, Y. C. ; Datta, S. / Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 16.4.1-16.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).
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title = "Enhancement mode strained (1.3{\%}) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate",
abstract = "Compressively strained Ge (s-Ge) quantum well (QW) FinFETs with Si0.3Ge0.7 buffer are fabricated on 300mm bulk Si substrate with 20nm WFin and 80nm fin pitch using sidewall image transfer (SIT) patterning process. We demonstrate (a) in-situ process flow for a tri-layer high-κ dielectric HfO2/Al2O3/GeOx gate stack achieving ultrathin EOT of 0.7nm with low DIT and low gate leakage; (b) 1.3{\%} s-Ge FinFETs with Phosphorus doped Si0.3Ge0.7 buffer on bulk Si substrate exhibiting peak μh=700 cm2/Vs, μh=220 cm2/Vs at 1013 /cm2 hole density. The s-Ge FinFETs achieve the highest μ∗Cmax of 3.1×10-4 F/Vs resulting in 5x higher ION over unstrained Ge FinFETs.",
author = "A. Agrawal and M. Barth and Rayner, {G. B.} and Arun, {V. T.} and C. Eichfeld and G. Lavallee and Yu, {S. Y.} and X. Sang and S. Brookes and Y. Zheng and Lee, {Y. J.} and Lin, {Y. R.} and Wu, {C. H.} and Ko, {C. H.} and J. LeBeau and R. Engel-Herbert and Mohney, {S. E.} and Yeo, {Y. C.} and S. Datta",
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Agrawal, A, Barth, M, Rayner, GB, Arun, VT, Eichfeld, C, Lavallee, G, Yu, SY, Sang, X, Brookes, S, Zheng, Y, Lee, YJ, Lin, YR, Wu, CH, Ko, CH, LeBeau, J, Engel-Herbert, R, Mohney, SE, Yeo, YC & Datta, S 2015, Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047064, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 16.4.1-16.4.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 12/15/14. https://doi.org/10.1109/IEDM.2014.7047064

Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate. / Agrawal, A.; Barth, M.; Rayner, G. B.; Arun, V. T.; Eichfeld, C.; Lavallee, G.; Yu, S. Y.; Sang, X.; Brookes, S.; Zheng, Y.; Lee, Y. J.; Lin, Y. R.; Wu, C. H.; Ko, C. H.; LeBeau, J.; Engel-Herbert, R.; Mohney, S. E.; Yeo, Y. C.; Datta, S.

2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 16.4.1-16.4.4 7047064 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

AU - Agrawal, A.

AU - Barth, M.

AU - Rayner, G. B.

AU - Arun, V. T.

AU - Eichfeld, C.

AU - Lavallee, G.

AU - Yu, S. Y.

AU - Sang, X.

AU - Brookes, S.

AU - Zheng, Y.

AU - Lee, Y. J.

AU - Lin, Y. R.

AU - Wu, C. H.

AU - Ko, C. H.

AU - LeBeau, J.

AU - Engel-Herbert, R.

AU - Mohney, S. E.

AU - Yeo, Y. C.

AU - Datta, S.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - Compressively strained Ge (s-Ge) quantum well (QW) FinFETs with Si0.3Ge0.7 buffer are fabricated on 300mm bulk Si substrate with 20nm WFin and 80nm fin pitch using sidewall image transfer (SIT) patterning process. We demonstrate (a) in-situ process flow for a tri-layer high-κ dielectric HfO2/Al2O3/GeOx gate stack achieving ultrathin EOT of 0.7nm with low DIT and low gate leakage; (b) 1.3% s-Ge FinFETs with Phosphorus doped Si0.3Ge0.7 buffer on bulk Si substrate exhibiting peak μh=700 cm2/Vs, μh=220 cm2/Vs at 1013 /cm2 hole density. The s-Ge FinFETs achieve the highest μ∗Cmax of 3.1×10-4 F/Vs resulting in 5x higher ION over unstrained Ge FinFETs.

AB - Compressively strained Ge (s-Ge) quantum well (QW) FinFETs with Si0.3Ge0.7 buffer are fabricated on 300mm bulk Si substrate with 20nm WFin and 80nm fin pitch using sidewall image transfer (SIT) patterning process. We demonstrate (a) in-situ process flow for a tri-layer high-κ dielectric HfO2/Al2O3/GeOx gate stack achieving ultrathin EOT of 0.7nm with low DIT and low gate leakage; (b) 1.3% s-Ge FinFETs with Phosphorus doped Si0.3Ge0.7 buffer on bulk Si substrate exhibiting peak μh=700 cm2/Vs, μh=220 cm2/Vs at 1013 /cm2 hole density. The s-Ge FinFETs achieve the highest μ∗Cmax of 3.1×10-4 F/Vs resulting in 5x higher ION over unstrained Ge FinFETs.

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U2 - 10.1109/IEDM.2014.7047064

DO - 10.1109/IEDM.2014.7047064

M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 16.4.1-16.4.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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Agrawal A, Barth M, Rayner GB, Arun VT, Eichfeld C, Lavallee G et al. Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 16.4.1-16.4.4. 7047064. (Technical Digest - International Electron Devices Meeting, IEDM; February). https://doi.org/10.1109/IEDM.2014.7047064