Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

A. Agrawal, M. Barth, G. B. Rayner, V. T. Arun, C. Eichfeld, G. Lavallee, S. Y. Yu, X. Sang, S. Brookes, Y. Zheng, Y. J. Lee, Y. R. Lin, C. H. Wu, C. H. Ko, J. LeBeau, R. Engel-Herbert, S. E. Mohney, Y. C. Yeo, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Compressively strained Ge (s-Ge) quantum well (QW) FinFETs with Si0.3Ge0.7 buffer are fabricated on 300mm bulk Si substrate with 20nm WFin and 80nm fin pitch using sidewall image transfer (SIT) patterning process. We demonstrate (a) in-situ process flow for a tri-layer high-κ dielectric HfO2/Al2O3/GeOx gate stack achieving ultrathin EOT of 0.7nm with low DIT and low gate leakage; (b) 1.3% s-Ge FinFETs with Phosphorus doped Si0.3Ge0.7 buffer on bulk Si substrate exhibiting peak μh=700 cm2/Vs, μh=220 cm2/Vs at 1013 /cm2 hole density. The s-Ge FinFETs achieve the highest μ∗Cmax of 3.1×10-4 F/Vs resulting in 5x higher ION over unstrained Ge FinFETs.

Original languageEnglish (US)
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.4.1-16.4.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period12/15/1412/17/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Enhancement mode strained (1.3%) germanium quantum well FinFET (W<sub>Fin</sub>=20nm) with high mobility (μ<sub>Hole</sub>=700 cm<sup>2</sup>/Vs), low EOT (∼0.7nm) on bulk silicon substrate'. Together they form a unique fingerprint.

Cite this