Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

A. Agrawal, M. Barth, G. B. Rayner, V. T. Arun, C. Eichfeld, G. Lavallee, S. Y. Yu, X. Sang, S. Brookes, Y. Zheng, Y. J. Lee, Y. R. Lin, C. H. Wu, C. H. Ko, J. LeBeau, R. Engel-Herbert, S. E. Mohney, Y. C. Yeo, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Fingerprint Dive into the research topics of 'Enhancement mode strained (1.3%) germanium quantum well FinFET (W<sub>Fin</sub>=20nm) with high mobility (μ<sub>Hole</sub>=700 cm<sup>2</sup>/Vs), low EOT (∼0.7nm) on bulk silicon substrate'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy