Enhancement mode strained (1.3%) germanium quantum well FinFET (W_Fin=20nm) with high mobility (μ_Hole=700 cm²/Vs), low EOT (∼0.7nm) on bulk silicon substrate

A. Agrawal, M. Barth, G. B. Rayner, V. T. Arun, C. Eichfeld, G. Lavallee, S. Y. Yu, X. Sang, S. Brookes, Y. Zheng, Y. J. Lee, Y. R. Lin, C. H. Wu, C. H. Ko, J. LeBeau, R. Engel-Herbert, S. E. Mohney, Y. C. Yeo, S. Datta

Materials Research Institute (MRI)
Institutes of Energy and the Environment (IEE)
Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

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Enhancement mode strained (1.3%) germanium quantum well FinFET (W_Fin=20nm) with high mobility (μ_Hole=700 cm²/Vs), low EOT (∼0.7nm) on bulk silicon substrate

Fingerprint Dive into the research topics of 'Enhancement mode strained (1.3%) germanium quantum well FinFET (W<sub>Fin</sub>=20nm) with high mobility (μ<sub>Hole</sub>=700 cm<sup>2</sup>/Vs), low EOT (∼0.7nm) on bulk silicon substrate'. Together they form a unique fingerprint.

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