Enhancement of ferroelectricity in strained BaTiO3 thin films

K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Che, D. C. Schlom, C. B. Eom

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Abstract

Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

Original languageEnglish (US)
Pages (from-to)1005-1009
Number of pages5
JournalScience
Volume306
Issue number5698
DOIs
StatePublished - Nov 5 2004

All Science Journal Classification (ASJC) codes

  • General

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