The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 1 2005|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering