Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

C. L. Liu, E. Ntsoenzok, A. Vengurlekar, S. Ashok, D. Alquier, M. O. Ruault, C. Dubois

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.

Original languageEnglish (US)
Pages (from-to)990-994
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - Dec 1 2005

Fingerprint

hydrogen plasma
Plasmas
Silicon
Hydrogen
cavities
Vacancies
augmentation
silicon
Defects
implantation
Spectroscopy
Annealing
Transmission electron microscopy
defects
hydrogen
Ions
proximity
mass spectroscopy
interactions
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Liu, C. L. ; Ntsoenzok, E. ; Vengurlekar, A. ; Ashok, S. ; Alquier, D. ; Ruault, M. O. ; Dubois, C. / Enhancement of He-induced cavities in silicon by hydrogen plasma treatment. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 3. pp. 990-994.
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Enhancement of He-induced cavities in silicon by hydrogen plasma treatment. / Liu, C. L.; Ntsoenzok, E.; Vengurlekar, A.; Ashok, S.; Alquier, D.; Ruault, M. O.; Dubois, C.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 01.12.2005, p. 990-994.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

AU - Liu, C. L.

AU - Ntsoenzok, E.

AU - Vengurlekar, A.

AU - Ashok, S.

AU - Alquier, D.

AU - Ruault, M. O.

AU - Dubois, C.

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AB - The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.

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