Enhancement of the electrical and thermal performance of AlGaN/GaN HEMTs using a novel resistive field plate structure

Bikramjit Chatterjee, Tae Kyoung Kim, Yiwen Song, James Spencer Lundh, Sang Woo Han, Daniel Shoemaker, Jae Min Lee, Moon Uk Cho, Rongming Chu, Joon Seop Kwak, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The extremely high concentration of the electric field near the drain corner of the gate is the major cause for premature breakdown and local hotspot formation of AlGaN/GaN high electron mobility transistors (HEMTs). This hotspot negatively impacts the device performance, reliability, lifetime, and limits the operability envelope. Metal field plates have been used to mitigate this electric field concentration. However, it has been proven difficult to reach the theoretical breakdown voltage of GaN using conventional field plate structures. In this work, a novel "resistive field plate" structure based on amorphous indium-gallium-zinc-oxide (a-IGZO) was constructed to minimize the electric field concentration by imposing a linear voltage boundary condition on the device surface, between the drain and source electrodes. Standard electrical testing and state-of-the-art optical thermography techniques were used to understand the electro-thermal interactions behind the improvement in electrical and thermal performance of AlGaN/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) employing the a-IGZO resistive field plate. The novel field plated design resulted in -25% increase in the device breakdown voltage (VB) and -24% reduction in the channel peak temperature as compared to a control sample employing no field plate structures. Key knowledge obtained from this study provides insight into enhancing the performance and reliability of AlGaN/GaN HEMTs and also suggests a viable solution that may enable the full exploitation of the potential of wide bandgap and ultra-wide bandgap lateral power electronic devices.

Original languageEnglish (US)
Title of host publicationProceedings of the 18th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2019
PublisherIEEE Computer Society
Pages362-369
Number of pages8
ISBN (Electronic)9781728124612
DOIs
StatePublished - May 2019
Event18th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2019 - Las Vegas, United States
Duration: May 28 2019May 31 2019

Publication series

NameInterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM
Volume2019-May
ISSN (Print)1936-3958

Conference

Conference18th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2019
CountryUnited States
CityLas Vegas
Period5/28/195/31/19

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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