Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy

Howard L. Evans, Robert K. Lowry, William L. Schultz, Thomas J. Morthorst, Pat M. Lenahan, John F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Excessive failures due to threshold voltage shifts impacted the reliability of a CMOS Analog Comparator circuit. These shifts were attributed to a process-induced neutral hole trap. Electrical techniques were used to verify the model and determine the root cause. This work showed the need for a low cost technique for early defect detection which could be utilized during process development or as a process monitor. The method of Electron Spin Resonance (ESR) was found to confirm the electrical results of this study. ESR is being developed as a diagnostic tool for improving product reliability.

Original languageEnglish (US)
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages410-419
Number of pages10
ISBN (Print)0780313577, 9780780313576
DOIs
StatePublished - 1994
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: Apr 12 1994Apr 14 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

OtherProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period4/12/944/14/94

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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