Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy

Howard L. Evans, Robert K. Lowry, William L. Schultz, Thomas J. Morthorst, Patrick M. Lenahan, John F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Excessive failures due to threshold voltage shifts impacted the reliability of a CMOS Analog Comparator circuit. These shifts were attributed to a process-induced neutral hole trap. Electrical techniques were used to verify the model and determine the root cause. This work showed the need for a low cost technique for early defect detection which could be utilized during process development or as a process monitor. The method of Electron Spin Resonance (ESR) was found to confirm the electrical results of this study. ESR is being developed as a diagnostic tool for improving product reliability.

Original languageEnglish (US)
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages410-419
Number of pages10
ISBN (Print)0780313577
StatePublished - Jan 1 1994
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: Apr 12 1994Apr 14 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

OtherProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period4/12/944/14/94

Fingerprint

Electron spin resonance spectroscopy
Paramagnetic resonance
Comparator circuits
Hole traps
Analog circuits
Threshold voltage
Costs
Defect detection

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Evans, H. L., Lowry, R. K., Schultz, W. L., Morthorst, T. J., Lenahan, P. M., & Conley, J. F. (1994). Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy. In Annual Proceedings - Reliability Physics (Symposium) (pp. 410-419). (Annual Proceedings - Reliability Physics (Symposium)). Publ by IEEE.
Evans, Howard L. ; Lowry, Robert K. ; Schultz, William L. ; Morthorst, Thomas J. ; Lenahan, Patrick M. ; Conley, John F. / Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy. Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, 1994. pp. 410-419 (Annual Proceedings - Reliability Physics (Symposium)).
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Evans, HL, Lowry, RK, Schultz, WL, Morthorst, TJ, Lenahan, PM & Conley, JF 1994, Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy. in Annual Proceedings - Reliability Physics (Symposium). Annual Proceedings - Reliability Physics (Symposium), Publ by IEEE, pp. 410-419, Proceedings of the 32nd Annual International Reliability Physics Proceedings, San Jose, CA, USA, 4/12/94.

Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy. / Evans, Howard L.; Lowry, Robert K.; Schultz, William L.; Morthorst, Thomas J.; Lenahan, Patrick M.; Conley, John F.

Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE, 1994. p. 410-419 (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Evans HL, Lowry RK, Schultz WL, Morthorst TJ, Lenahan PM, Conley JF. Enhancing reliability of CMOS devices using electrical techniques and electron spin resonance spectroscopy. In Annual Proceedings - Reliability Physics (Symposium). Publ by IEEE. 1994. p. 410-419. (Annual Proceedings - Reliability Physics (Symposium)).