Environmental sensitivity of Au diodes on n-AlGaN

E. D. Readinger, Suzanne E. Mohney

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Studies of the environmental aging of Schottky barriers were presented. To determine the influence of oxygen versus water vapor, Au diodes on wafer 5 were prepared using the shadow mask with an Al ohmic pad and were tested for environmental aging under controlled ambients. The annealing experiments revealed that the environmental change was partially reversible with storage in vacuum, or to a greater extent when the diodes were annealed in N2 gas up to 250°C. It was indicated that the environmental aging phenomenon is associated interfacial defects that exist at the metal/semiconductor interface.

Original languageEnglish (US)
Pages (from-to)375-381
Number of pages7
JournalJournal of Electronic Materials
Volume34
Issue number4
DOIs
StatePublished - Jan 1 2005

Fingerprint

Diodes
Aging of materials
diodes
sensitivity
Steam
Water vapor
water vapor
Masks
masks
Gases
Metals
wafers
Vacuum
Annealing
Semiconductor materials
Oxygen
Defects
vacuum
annealing
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Environmental sensitivity of Au diodes on n-AlGaN. / Readinger, E. D.; Mohney, Suzanne E.

In: Journal of Electronic Materials, Vol. 34, No. 4, 01.01.2005, p. 375-381.

Research output: Contribution to journalArticle

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