Epitaxial graphene growth on SiC wafers

D. K. Gaskill, G. G. Jernigan, P. M. Campbell, J. L. Tedesco, J. C. Culbertson, B. L. VanMil, R. L. Myers-Ward, C. R. Eddy, J. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, J. A. Robinson, M. A. Fanton, J. P. Stitt, T. Stitt, D. Snyder, X. Wang, E. Frantz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

Abstract

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.

Original languageEnglish (US)
Title of host publicationECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications
Pages117-124
Number of pages8
Edition5
DOIs
StatePublished - Dec 1 2009
Event1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: May 25 2009May 29 2009

Publication series

NameECS Transactions
Number5
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period5/25/095/29/09

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Gaskill, D. K., Jernigan, G. G., Campbell, P. M., Tedesco, J. L., Culbertson, J. C., VanMil, B. L., Myers-Ward, R. L., Eddy, C. R., Moon, J., Curtis, D., Hu, M., Wong, D., McGuire, C., Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D., Wang, X., & Frantz, E. (2009). Epitaxial graphene growth on SiC wafers. In ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications (5 ed., pp. 117-124). (ECS Transactions; Vol. 19, No. 5). https://doi.org/10.1149/1.3119535