TY - JOUR
T1 - Epitaxial graphene materials integration
T2 - Effects of dielectric overlayers on structural and electronic properties
AU - Robinson, Joshua Alexander
AU - Labella, Michael
AU - Trumbull, Kathleen A.
AU - Weng, Xiaojun
AU - Cavelero, Randall
AU - Daniels, Tad
AU - Hughes, Zachary
AU - Hollander, Mathew
AU - Fanton, Mark Andrew
AU - Snyder, David W.
PY - 2010/5/25
Y1 - 2010/5/25
N2 - We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
AB - We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
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U2 - 10.1021/nn1003138
DO - 10.1021/nn1003138
M3 - Article
C2 - 20415460
AN - SCOPUS:77952943376
VL - 4
SP - 2667
EP - 2672
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 5
ER -