Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Joshua Alexander Robinson; Michael Labella; Kathleen A. Trumbull; Xiaojun Weng; Randall Cavelero; Tad Daniels; Zachary Hughes; Mathew Hollander; Mark Andrew Fanton; David W. Snyder

doi:10.1021/nn1003138

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Joshua Alexander Robinson, Michael Labella, Kathleen A. Trumbull, Xiaojun Weng, Randall Cavelero, Tad Daniels, Zachary Hughes, Mathew Hollander, Mark Andrew Fanton, David W. Snyder

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al₂O₃, HfO₂, TiO₂, and Ta ₂O₅ varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta₂O ₅, while the deposition if TiO₂ appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

Original language	English (US)
Pages (from-to)	2667-2672
Number of pages	6
Journal	ACS Nano
Volume	4
Issue number	5
DOIs	https://doi.org/10.1021/nn1003138
State	Published - May 25 2010

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/nn1003138

Fingerprint Dive into the research topics of 'Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties'. Together they form a unique fingerprint.

Cite this

Robinson, Joshua Alexander ; Labella, Michael ; Trumbull, Kathleen A. ; Weng, Xiaojun ; Cavelero, Randall ; Daniels, Tad ; Hughes, Zachary ; Hollander, Mathew ; Fanton, Mark Andrew ; Snyder, David W. / Epitaxial graphene materials integration : Effects of dielectric overlayers on structural and electronic properties. In: ACS Nano. 2010 ; Vol. 4, No. 5. pp. 2667-2672.

@article{5957d49ab96b4ae88322ab06b8c7b34f,

title = "Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties",

abstract = "We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.",

author = "Robinson, {Joshua Alexander} and Michael Labella and Trumbull, {Kathleen A.} and Xiaojun Weng and Randall Cavelero and Tad Daniels and Zachary Hughes and Mathew Hollander and Fanton, {Mark Andrew} and Snyder, {David W.}",

year = "2010",

month = may,

day = "25",

doi = "10.1021/nn1003138",

language = "English (US)",

volume = "4",

pages = "2667--2672",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "5",

}

Epitaxial graphene materials integration : Effects of dielectric overlayers on structural and electronic properties. / Robinson, Joshua Alexander; Labella, Michael; Trumbull, Kathleen A.; Weng, Xiaojun; Cavelero, Randall; Daniels, Tad; Hughes, Zachary; Hollander, Mathew; Fanton, Mark Andrew ; Snyder, David W.

In: ACS Nano, Vol. 4, No. 5, 25.05.2010, p. 2667-2672.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Epitaxial graphene materials integration

T2 - Effects of dielectric overlayers on structural and electronic properties

AU - Robinson, Joshua Alexander

AU - Labella, Michael

AU - Trumbull, Kathleen A.

AU - Weng, Xiaojun

AU - Cavelero, Randall

AU - Daniels, Tad

AU - Hughes, Zachary

AU - Hollander, Mathew

AU - Fanton, Mark Andrew

AU - Snyder, David W.

PY - 2010/5/25

Y1 - 2010/5/25

N2 - We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

AB - We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

UR - http://www.scopus.com/inward/record.url?scp=77952943376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952943376&partnerID=8YFLogxK

U2 - 10.1021/nn1003138

DO - 10.1021/nn1003138

M3 - Article

C2 - 20415460

AN - SCOPUS:77952943376

VL - 4

SP - 2667

EP - 2672

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 5

ER -