Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Xiaojun Weng, Joshua Alexander Robinson, Kathleen Trumbull, Randall Cavalero, Mark Andrew Fanton, David W. Snyder

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The fundamental structural properties of multilayer epitaxial graphene (MEG) on C-face SiC(0001̄) were revealed in a straightforward manner using cross-sectional transmission electron microscopy (TEM) and scanning TEM (STEM). The AB-stacking and the azimuthal rotational disorder of the graphene layers were directly identified by selected area electron diffraction and high-resolution TEM. The directly interpretable STEM revealed that the interlayer spacing between the first graphene layer and the top SiC bilayer is substantially larger than that of the bulk graphite. Such a large interlayer spacing combined with the regional partially decomposed top bilayers of the SiC substrate provides a plausible explanation to the weak bonding between the MEG film and the SiC(0001̄) substrate.

Original languageEnglish (US)
Article number031904
JournalApplied Physics Letters
Volume100
Issue number3
DOIs
StatePublished - Jan 16 2012

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graphene
transmission electron microscopy
interlayers
spacing
electron diffraction
graphite
disorders
scanning electron microscopy
scanning
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Epitaxial graphene on SiC(0001̄) : Stacking order and interfacial structure. / Weng, Xiaojun; Robinson, Joshua Alexander; Trumbull, Kathleen; Cavalero, Randall; Fanton, Mark Andrew; Snyder, David W.

In: Applied Physics Letters, Vol. 100, No. 3, 031904, 16.01.2012.

Research output: Contribution to journalArticle

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AU - Weng, Xiaojun

AU - Robinson, Joshua Alexander

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AU - Cavalero, Randall

AU - Fanton, Mark Andrew

AU - Snyder, David W.

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