Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Joshua Alexander Robinson, Matthew Hollander, Michael Labella, Kathleen A. Trumbull, Randall Cavalero, David W. Snyder

Research output: Contribution to journalArticle

112 Citations (Scopus)

Abstract

We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm 2/(V s) to >2000 cm2/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.

Original languageEnglish (US)
Pages (from-to)3875-3880
Number of pages6
JournalNano Letters
Volume11
Issue number9
DOIs
StatePublished - Sep 14 2011

Fingerprint

Intercalation
intercalation
Hydrogen
Buffers
graphene
transistors
Graphite
elimination
Carrier mobility
Cutoff frequency
Transconductance
hydrogen
buffers
Graphene
transconductance
carrier mobility
cut-off
saturation
Graphene transistors

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Robinson, Joshua Alexander ; Hollander, Matthew ; Labella, Michael ; Trumbull, Kathleen A. ; Cavalero, Randall ; Snyder, David W. / Epitaxial graphene transistors : Enhancing performance via hydrogen intercalation. In: Nano Letters. 2011 ; Vol. 11, No. 9. pp. 3875-3880.
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Epitaxial graphene transistors : Enhancing performance via hydrogen intercalation. / Robinson, Joshua Alexander; Hollander, Matthew; Labella, Michael; Trumbull, Kathleen A.; Cavalero, Randall; Snyder, David W.

In: Nano Letters, Vol. 11, No. 9, 14.09.2011, p. 3875-3880.

Research output: Contribution to journalArticle

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