Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Joshua A. Robinson, Matthew Hollander, Michael Labella, Kathleen A. Trumbull, Randall Cavalero, David W. Snyder

Research output: Contribution to journalArticle

118 Scopus citations

Abstract

We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm 2/(V s) to >2000 cm2/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.

Original languageEnglish (US)
Pages (from-to)3875-3880
Number of pages6
JournalNano letters
Volume11
Issue number9
DOIs
StatePublished - Sep 14 2011

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this