Epitaxial growth of Bi2Se3 in the (0015) orientation on GaAs (001)

Theresa P. Ginley, Yuying Zhang, Chaoying Ni, Stephanie Law

Research output: Contribution to journalArticlepeer-review


Materials with van der Waals bonding show exotic physics and may have applications in a variety of areas including new optoelectronic devices, spintronic devices, and as quantum materials. To date, control over the morphology and surface orientation of thin films of these materials without substrate pretreatment has been difficult. In this paper, the authors report the growth of Bi2Se3 on GaAs (001) substrates. By controlling the growth conditions and adatom mobility, the authors are able to obtain epitaxial growth in the (0015) orientation without substrate prepatterning. Although the growth window is small, this demonstration opens the door for future control of the orientation of van der Waals materials through control of parameters during growth and via interaction with the substrate.

Original languageEnglish (US)
Article number023404
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - Mar 1 2020

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Epitaxial growth of Bi2Se3 in the (0015) orientation on GaAs (001)'. Together they form a unique fingerprint.

Cite this