Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

Jesse S. Jur, Virginia D. Wheeler, Daniel J. Lichtenwalner, Jon Paul Maria, Mark A.L. Johnson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

Original languageEnglish (US)
Article number042902
JournalApplied Physics Letters
Volume98
Issue number4
DOIs
StatePublished - Jan 24 2011

Fingerprint

oxides
hydroxides
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J. P., & Johnson, M. A. L. (2011). Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. Applied Physics Letters, 98(4), [042902]. https://doi.org/10.1063/1.3541883
Jur, Jesse S. ; Wheeler, Virginia D. ; Lichtenwalner, Daniel J. ; Maria, Jon Paul ; Johnson, Mark A.L. / Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. In: Applied Physics Letters. 2011 ; Vol. 98, No. 4.
@article{10cad5b1f27a4c0da7cdf6a0f3e619aa,
title = "Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN",
abstract = "Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2{\%}, whereas La2O3 growth, with a lattice mismatch of ∼21{\%}, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.",
author = "Jur, {Jesse S.} and Wheeler, {Virginia D.} and Lichtenwalner, {Daniel J.} and Maria, {Jon Paul} and Johnson, {Mark A.L.}",
year = "2011",
month = "1",
day = "24",
doi = "10.1063/1.3541883",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Jur, JS, Wheeler, VD, Lichtenwalner, DJ, Maria, JP & Johnson, MAL 2011, 'Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN', Applied Physics Letters, vol. 98, no. 4, 042902. https://doi.org/10.1063/1.3541883

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. / Jur, Jesse S.; Wheeler, Virginia D.; Lichtenwalner, Daniel J.; Maria, Jon Paul; Johnson, Mark A.L.

In: Applied Physics Letters, Vol. 98, No. 4, 042902, 24.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

AU - Jur, Jesse S.

AU - Wheeler, Virginia D.

AU - Lichtenwalner, Daniel J.

AU - Maria, Jon Paul

AU - Johnson, Mark A.L.

PY - 2011/1/24

Y1 - 2011/1/24

N2 - Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

AB - Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=79551635689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551635689&partnerID=8YFLogxK

U2 - 10.1063/1.3541883

DO - 10.1063/1.3541883

M3 - Article

AN - SCOPUS:79551635689

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042902

ER -