Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Joan Marie Redwing, A. Pogrebnyakov, S. Raghavan, J. E. Jones, X. X. Xi, S. V. Xu, Qi Li, Zi-kui Liu, V. Vaithyanathan, D. G. Schlom

Research output: Contribution to journalConference article

Abstract

The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

Original languageEnglish (US)
Article numberEE7.3
Pages (from-to)153-155
Number of pages3
JournalMaterials Research Society Symposium Proceedings
VolumeEXS
Issue number3
Publication statusPublished - Dec 1 2004
Event2003 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Redwing, J. M., Pogrebnyakov, A., Raghavan, S., Jones, J. E., Xi, X. X., Xu, S. V., ... Schlom, D. G. (2004). Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition. Materials Research Society Symposium Proceedings, EXS(3), 153-155. [EE7.3].