Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Joan Marie Redwing; A. Pogrebnyakov; S. Raghavan; J. E. Jones; X. X. Xi; S. V. Xu; Qi Li; Zi-kui Liu; V. Vaithyanathan; D. G. Schlom

Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Joan Marie Redwing, A. Pogrebnyakov, S. Raghavan, J. E. Jones, X. X. Xi, S. V. Xu, Qi Li, Zi-kui Liu, V. Vaithyanathan, D. G. Schlom

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of the substrates on the structural and electrical properties of MgB ₂ thin films deposited by HPCVD was discussed. Epitaxial MgB ₂ layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB ₂ films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB ₂ lattice to leads to decrease in Tc.

Original language	English (US)
Article number	EE7.3
Pages (from-to)	153-155
Number of pages	3
Journal	Materials Research Society Symposium Proceedings
Volume	EXS
Issue number	3
State	Published - Dec 1 2004
Event	2003 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{776329720ffa4c3ebeb0f50faab9854b,

title = "Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition",

abstract = "The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.",

author = "Redwing, {Joan Marie} and A. Pogrebnyakov and S. Raghavan and Jones, {J. E.} and Xi, {X. X.} and Xu, {S. V.} and Qi Li and Zi-kui Liu and V. Vaithyanathan and Schlom, {D. G.}",

year = "2004",

month = dec,

day = "1",

language = "English (US)",

volume = "EXS",

pages = "153--155",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

number = "3",

note = "2003 MRS Fall Meeting ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

AU - Redwing, Joan Marie

AU - Pogrebnyakov, A.

AU - Raghavan, S.

AU - Jones, J. E.

AU - Xi, X. X.

AU - Xu, S. V.

AU - Li, Qi

AU - Liu, Zi-kui

AU - Vaithyanathan, V.

AU - Schlom, D. G.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

AB - The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

UR - http://www.scopus.com/inward/record.url?scp=23844449353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844449353&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23844449353

SN - 0272-9172

VL - EXS

SP - 153

EP - 155

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

IS - 3

M1 - EE7.3

T2 - 2003 MRS Fall Meeting

Y2 - 1 December 2003 through 4 December 2003

ER -

Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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