Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Joan Marie Redwing, A. Pogrebnyakov, S. Raghavan, J. E. Jones, X. X. Xi, S. V. Xu, Qi Li, Zi-kui Liu, V. Vaithyanathan, D. G. Schlom

Research output: Contribution to journalConference articlepeer-review

Abstract

The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

Original languageEnglish (US)
Article numberEE7.3
Pages (from-to)153-155
Number of pages3
JournalMaterials Research Society Symposium Proceedings
VolumeEXS
Issue number3
StatePublished - Dec 1 2004
Event2003 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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