Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

Mark D. Losego, Seiji Mita, Ramon Collazo, Zlatko Sitar, Jon Paul Maria

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Abstract

Molecular beam deposition systems allow for unparalleled control of film composition and structure. This article addresses the capacity for controlling metal and oxidant fluxes in the Yb/O2 system to access the metastable phase ytterbium monoxide (YbO). Experiments exploring the growth of polycrystalline YbOx films by molecular beam deposition demonstrate that a 2:1 molar ratio of Yb:O2 fluxes is necessary to achieve preferential growth of the divalent oxide. Applying similar deposition conditions to a (0 0 1) GaN surface leads to the growth of epitaxial (1 1 1) YbO films. Similar to other rocksalt oxides grown on GaN surfaces, YbO films display a 3D growth mechanism that leads to a grainy morphology with crystallites of 50 nm lateral dimensions. Rocking curves in ω and φ have full-width half-maximum values of 1.77° and 4.1°, respectively; further improvements in crystal quality appear to be limited by the thermal stability of the YbO phase.

Original languageEnglish (US)
Pages (from-to)51-56
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number1
DOIs
StatePublished - Jan 4 2008

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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